IJERT-EMS
IJERT-EMS

Performance Evaluation Of Strained Si/Sige N-Channel Mosfet


Performance Evaluation Of Strained Si/Sige N-Channel Mosfet
Authors : Rakhi Sharma, Ajay Kumar Yadav, Dr.D.B.Ojha, Vishal Upmanu
Publication Date: 29-11-2012

Authors

Author(s):  Rakhi Sharma, Ajay Kumar Yadav, Dr.D.B.Ojha, Vishal Upmanu

Published in:   International Journal of Engineering Research & Technology

License:  This work is licensed under a Creative Commons Attribution 4.0 International License.

Website: www.ijert.org

Volume/Issue:   Vol.1 - Issue 9 (November - 2012)

e-ISSN:   2278-0181

Abstract

Electronics, and in particular the integrated circuit has made possible the design of powerful and flexible processors which provide highly intelligent and adaptable devices for the user. Integrated circuit memories fabricated by using MOS (Metal-Oxide-Semiconductor) technology have provided the essential elements to complement these processors and, together with a wide range of logic and analog integrated circuitry. N MOS technology has an important role in IC fabrication. Works are going on to improve the performance of n MOSFETs. Device scaling which was a major driving force in the development of high density ICs is facing a number of obstacles, making it very difficult to sustain the trend of device performance improvements. Consequently, innovative device structures and materials are actively being investigated to boost performance. The tensile-strained-Si MOSFET is getting attention recently, as it significantly enhances the inversion layer electron mobility and hence the performance of deep submicron MOSFETs for high speed operations. One of the suggestions from researcher was to develop a strained SiGe channel structure grown on a normal Si substrate. These SiGe-channel MOSFET°«s show some significantly better electrical characteristics as compared to the silicon- channel MOSFET°«s. In this performance of a strained Si/SiGe n-Channel MOSFET has been studied on the basis of ORCAD simulations. Parameters needed for the simulations were first obtained on the basis of analytical model. Physics based 2-D model for the surface potential variation along the channel in an n-channel SiGe MOSFET°«s is developed by solving the two- dimensional Poisson°«s equation. It is simple in its Electronics, and in particular the integrated circuit has made possible the design of powerful and flexible processors which provide highly intelligent and adaptable devices for the user. Integrated circuit memories fabricated by using MOS (Metal-Oxide-Semiconductor) technology have provided the essential elements to complement these processors and, together with a wide range of logic and analog integrated circuitry. N MOS technology has an important role in IC fabrication. Works are going on to improve the performance of n MOSFETs. Device scaling which was a major driving force in the development of high density ICs is facing a number of obstacles, making it very difficult to sustain the trend of device performance improvements. Consequently, innovative device structures and materials are actively being investigated to boost performance. The tensile-strained-Si MOSFET is getting attention recently, as it significantly enhances the inversion layer electron mobility and hence the performance of deep submicron MOSFETs for high speed operations. One of the suggestions from researcher was to develop a strained SiGe channel structure grown on a normal Si substrate. These SiGe-channel MOSFET°«s show some significantly better electrical characteristics as compared to the silicon- channel MOSFET°«s. In this performance of a strained Si/SiGe n-Channel MOSFET has been studied on the basis of ORCAD simulations. Parameters needed for the simulations were first obtained on the basis of analytical model. Physics based 2-D model for the surface potential variation along the channel in an n-channel SiGe MOSFET°«s is developed by solving the two- dimensional Poisson°«s equation. It is simple in its functional form and lends itself to efficient computation. Concept of strained silicon and effects due to germanium concentration in device parameters are also studied in this work Strained Si/SiGe n-channel MOSFET has tremendous applications in biomedical field. The modern communication world is also taking interest to use strained Si/SiGe n-channel MOSFET in its applications because of high speed of operation

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